MOSFET N-CH 55V 5.1A SOT223

Description

Packaging: Cut Tape (CT) Alternate PackagingSeries: HEXFETÂPart Status: ActiveFET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 55VCurrent - Continuous Drain (Id) @ 25°C: 5.1A (Ta)Drive Voltage (Max Rds On, Min Rds On): 10VRds On (Max) @ Id, Vgs: 57.5mOhm @ 3.1A, 10VVgs(th) (Max) @ Id: 4V @ 250µAGate Charge (Qg) (Max) @ Vgs: 14nC @ 10VVgs (Max): ±20VInput Capacitance (Ciss) (Max) @ Vds: 340pF @ 25VFET Feature: -Power Dissipation (Max): 1W (Ta)Operating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: SOT-223Package / Case: TO-261-4, TO-261AA