Description
🚀 Elevate Your Electronics Game!
- NOISE FREE OPERATION - Achieve superior signal clarity with a noise figure of just 1.45 dB.
- FUTURE READY TECHNOLOGY - With a DCCurrentGain of 200, this NPN transistor is built for the next generation of RF applications.
- MAX VOLTAGE MIN HASSLE - With a collector-emitter voltage of 2.8V, this transistor ensures reliability in your circuits.
- UNLEASH THE POWER OF RF - Experience cutting-edge performance with the BFU710F, designed for high-frequency applications.
- EFFICIENCY MEETS PRECISION - Enjoy a power dissipation of 136mW, perfect for compact designs without compromising on performance.
The NXP Semiconductor BFU710F is a high-performance NPN RF transistor designed for advanced applications. With a maximum collector-emitter voltage of 2.8V and a collector current of 10mA, it operates efficiently at frequencies up to 43GHz. This transistor features a low noise figure of 1.45 dB and a high current gain of 200, making it ideal for modern electronic designs.
